Section of Optoelectronics and Semiconductor Technology

Research Output 1974 2019

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1984
5 Citations (Scopus)

INFLUENCE OF THE EXCHANGE INTERACTION ON THE ENERGY SPECTRUM OF Hg//1// minus //xMn//xTe WITH epsilon //g greater than 0 IN A MAGNETIC FIELD.

Zverev, L. P., Kruzhaev, V. V., Min'kov, G. M., Rut, O. E., Gavaleshko, N. P. & Frasunyak, V. M., 1 Oct 1984, In : Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela). 26, 10, p. 1778-1782 5 p.

Research output: Contribution to journalArticleResearchpeer-review

Exchange interactions
Conduction bands
Electrons
Magnetic fields
Tunnels
1983
7 Citations (Scopus)

TWO-DIMENSIONAL SURFACE ELECTRONS IN SEMICONDUCTING p-TYPE Hg1 - xCdxTe WITH AN ANODIC OXIDE.

Elizarov, A. I., Zverev, L. P., Kruzhaev, V. V., Min'kov, G. M. & Rut, O. E., 1 Jan 1983, In : Soviet physics. Semiconductors. 17, 3, p. 284-286 3 p.

Research output: Contribution to journalArticleResearchpeer-review

Inversion layers
Anodic oxidation
Electrons
galvanomagnetic effects
inversions
1982

TUNNELLING CONDUCTIVITY OSCILLATIONS OF P-HG1-XCDXTE-AL2O3-PB STRUCTURES IN A MAGNETIC-FIELD

Minkov, G. M., Rut, O. E., Lukanin, A. I. & Kruzhaev, V. V., 1982, In : Физика твердого тела. 24, 2, p. 356-364 9 p.

Research output: Contribution to journalArticleResearchpeer-review

TUNNELLING SPECTROSCOPY OF N-HGSE

Rut, O. E., Kruzhaev, V. V. & Minkov, G. M., 1981, In : Физика твердого тела. 23, 11, p. 3212-3217 6 p.

Research output: Contribution to journalArticleResearchpeer-review

TWO-DIMENSIONAL SURFACE ELECTRONS IN HGSE

Minkov, G. M., Rut, O. E. & Kruzhaev, V. V., 1981, In : Физика твердого тела. 23, 9, p. 2574-2576 3 p.

Research output: Contribution to journalArticleResearchpeer-review

1980
Exchange interactions
Bias voltage
Doping (additives)
Scattering
Magnetic fields

POSSIBLE USE OF TUNNEL SPECTROSCOPY FOR DETERMINING THE ENERGY-DEPENDENCE OF THE EFFECTIVE MASS IN SEMICONDUCTORS

Zverev, L. P., Kruzhaev, V. V., Minkov, G. M. & Rut, O. E., 1980, In : JETP Letters. 31, 3, p. 154-157 4 p.

Research output: Contribution to journalArticleResearchpeer-review

TUNNELING CONDUCTIVITY OSCILLATIONS OF N-INAS-OXIDE-PB JUNCTION IN QUANTIZING MAGNETIC-FIELD

Minkov, G. M. & Kruzhaev, V. V., 1980, In : Физика твердого тела. 22, 6, p. 1641-1648 8 p.

Research output: Contribution to journalArticleResearchpeer-review

1979

APPLICATION OF TUNNEL SPECTROSCOPY IN A MAGNETIC-FIELD TO THE INVESTIGATION OF THE DISPERSION LAW OF A HEAVILY-DOPED N-INAS

Zverev, L. P., Minkov, G. M. & Kruzhaev, VV., 1979, In : JETP Letters. 29, 7, p. 365-369 5 p.

Research output: Contribution to journalArticleResearchpeer-review

1978

INTERBAND ABSORPTION OF LIGHT IN INDIUM-PHOSPHIDE IN QUANTIZING MAGNETIC-FIELDS

Emlin, R. V., Zverev, L. P., Rut, O. E. & Korovina, N. V., 1978, In : Semiconductors. 12, 11, p. 1243-1245 3 p.

Research output: Contribution to journalArticleResearchpeer-review

1977
14 Citations (Scopus)

MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE.

Zverev, L. P., Negashev, S. A., Kruzhaev, V. V. & Min'kov, G. M., 1 Jan 1977, In : Semiconductors. 11, 6, p. 603-605 3 p.

Research output: Contribution to journalArticleResearchpeer-review

Gallium arsenide
gallium
Energy gap
Doping (additives)
Exchange interactions
1976

DIRECT DETERMINATION OF FORBIDDEN-BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR.

Zverev, L. P., Kruzhaev, V. V., Negashev, S. A. & Min'kov, G. M., 1 Jan 1976, In : Semiconductors. 10, 3, p. 337-338 2 p.

Research output: Contribution to journalArticleResearchpeer-review

Tellurium
forbidden bands
tellurium
Semiconductor materials
Magnetic fields

MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES.

Zverev, L. P., Min'kov, G. M., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In : Semiconductors. 10, 12, p. 1388-1390 3 p.

Research output: Contribution to journalArticleResearchpeer-review

Phonons
phonons
Scattering
electron energy
Electron-phonon interactions

METHOD FOR DETERMINATION OF THE CONDUCTION MECHANISM IN SEMICONDUCTORS.

Zverev, L. P., Min'kov, G. M., Kruzhaev, V. V. & Negashev, S. A., 1 Jan 1976, In : Semiconductors. 10, 4

Research output: Contribution to journalArticleResearchpeer-review

Electric fields
Semiconductor materials
conduction
conductivity
electric fields

PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD.

Zverev, L. P., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In : Semiconductors. 10, 6, p. 609-612 4 p.

Research output: Contribution to journalArticleResearchpeer-review

Zinc
Photoluminescence
zinc
Magnetic fields
photoluminescence
1 Citation (Scopus)

SWITCHING TIME IN LOW-TEMPERATURE IMPURITY BREAKDOWN IN n-TYPE GaAs

Zverev, L. P., Min'kov, G. M., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In : Semiconductors. 10, 6, p. 716-717 2 p.

Research output: Contribution to journalArticleResearchpeer-review

Carrier concentration
breakdown
Impurities
impurities
Temperature
1975

CURRENT FILAMENTATION IN IMPURITY BREAKDOWN IN N-TYPE GAAS

Zverev, L. P., Minkov, G. M. & Sumin, N. K., 1975, In : Semiconductors. 8, 11, p. 1457-1458 2 p.

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Investigations of the absorption edge of InP in a strong magnetic field

Zverev, L. P., Emlin, K. V. & Rut, O. E., 1 Jan 1975, In : physica status solidi (b). 68, 1, p. 93-97 5 p.

Research output: Contribution to journalArticleResearchpeer-review

Magnetic fields
magnetic fields

OPTICAL HEATING OF ELECTRONS IN GaAs

Zverev, L. P., Min'kov, G. M., Kruzhaev, V. V. & Negashev, S. A., 1 Jan 1975, In : Semiconductors. 9, 11, p. 1420-1421 2 p.

Research output: Contribution to journalArticleResearchpeer-review

Heating
heating
Electrons
Laser radiation
electrons
1974

INFLUENCE OF A STRONG MAGNETIC-FIELD ON PHOTOLUMINESCENCE SPECTRUM OF N-TYPE GALLIUM-ARSENIDE

Zverev, L. P., Minkov, G. M. & Negashev, S. A., 1974, In : Semiconductors. 7, 8, p. 1056-1057 2 p.

Research output: Contribution to journalArticleResearchpeer-review

MECHANISM OF RADIATIVE RECOMBINATION IN STRONGLY DOPED P-GAAS

Zverev, L. P., Kruzhaev, V. V. & Negashev, S. A., 1974, In : JETP Letters. 20, 1, p. 22-24 3 p.

Research output: Contribution to journalArticleResearchpeer-review