The longitudinal ρ_ xx and Hall ρ_ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n -In_0.9Ga_0.1As/In_0.81Al_0.19As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance ρ_ xx peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.
|Translated title of the contribution||Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures|
|Number of pages||8|
|Journal||Физика и техника полупроводников|
|Publication status||Published - 2018|
- 29.00.00 PHYSICS
Level of Research Output
- VAK List