Abstract
FIELD: electronics.
SUBSTANCE: invention relates to radio- and microelectronics and can be used in microelectronic equipment with low values of currents and voltages, which requires switching within time intervals from 25 to 110 minutes at 10–150 °C. Resistive material contains silver sulphide, non-stoichiometric germanium sulphide and non-stoichiometric arsenic sulphide according to empirical formula: 0.5(Ag2S)⋅(Ge1+xS)⋅0.5(As2-2xS3), where 0.4≤x≤0.8.
EFFECT: material shows declared properties: functional dependence of resistance on the application time of constant difference in potentials, has time periods of electric conductivity relaxation from 70 to 196 seconds and the value of specific electrical resistance of about 105–106 Ohm⋅m, within temperature range of 10–150 °C.
SUBSTANCE: invention relates to radio- and microelectronics and can be used in microelectronic equipment with low values of currents and voltages, which requires switching within time intervals from 25 to 110 minutes at 10–150 °C. Resistive material contains silver sulphide, non-stoichiometric germanium sulphide and non-stoichiometric arsenic sulphide according to empirical formula: 0.5(Ag2S)⋅(Ge1+xS)⋅0.5(As2-2xS3), where 0.4≤x≤0.8.
EFFECT: material shows declared properties: functional dependence of resistance on the application time of constant difference in potentials, has time periods of electric conductivity relaxation from 70 to 196 seconds and the value of specific electrical resistance of about 105–106 Ohm⋅m, within temperature range of 10–150 °C.
| Translated title of the contribution | RESISTIVE MATERIAL BASED ON NON-STOICHIOMETRIC SULPHIDES: patent of invention |
|---|---|
| Original language | Russian |
| Patent number | 2614738 |
| IPC | H01C 7/00 |
| Filing date | 31/12/2015 |
| Publication status | Published - 29 Mar 2017 |