Способ калибровки слитка полупроводникового материала: патент на изобретение

Translated title of the contribution: SEMICONDUCTOR MATERIAL INGOT CALIBRATION METHOD

Research output: Patent

Abstract

FIELD: electrical engineering. SUBSTANCE: invention relates to the field of electronic products manufacturing, which workpiece is the semiconductor material ingot, which requires calibration, i.e., the cylindrical surface production. In the semiconductor material ingot calibration method, including roughing and finishing, finishing is performed by grinding with diamond wheels with a grain size of 160–250 mcm, and finishing is performed by turning with the cutting depth of 250–350 mcm with the feed of 500–700 mcm/rpm by the diamond blade tool, which main cutting edge has a rounding radius of 0.2–0.5 mcm and is set parallel to the axis. EFFECT: technical result consists in increase in the ingot surface layer quality, reduction in the damaged surface layer after processing, increase in the process productivity, eliminating the long-lasting finishing grinding, replacing the blade processing.
Translated title of the contributionSEMICONDUCTOR MATERIAL INGOT CALIBRATION METHOD
Original languageRussian
Patent number2682564
IPCH01L 22/12
Filing date09/04/2018
Publication statusPublished - 19 Mar 2019

GRNTI

  • 29.03.00

Fingerprint

Dive into the research topics of 'SEMICONDUCTOR MATERIAL INGOT CALIBRATION METHOD: патент на изобретение'. Together they form a unique fingerprint.

Cite this