Acceptor states in the dilute magnetic semiconductor p-HgMnTe with Eg > 0 under uniaxial stress

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)850-853
Number of pages4
JournalJournal of Crystal Growth
Volume117
Issue number1-4
DOIs
Publication statusPublished - 2 Feb 1992

Fingerprint

Magnetic semiconductors
Ionization potential
Magnetic fields
magnetic fields
ionization
electrical resistivity
Hall effect
Compaction
energy spectra
Semiconductor materials
energy
coefficients
Temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

WoS ResearchAreas Categories

  • Crystallography
  • Materials Science, Multidisciplinary
  • Physics, Applied

Cite this

@article{98afd46eb39047b0a05d9b9d89e76962,
title = "Acceptor states in the dilute magnetic semiconductor p-HgMnTe with Eg > 0 under uniaxial stress",
author = "Germanenko, {A. V.} and Min'kov, {G. M.} and Rut, {O. E.}",
year = "1992",
month = "2",
day = "2",
doi = "10.1016/0022-0248(92)90870-O",
language = "English",
volume = "117",
pages = "850--853",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier BV",
number = "1-4",

}

Acceptor states in the dilute magnetic semiconductor p-HgMnTe with Eg > 0 under uniaxial stress. / Germanenko, A. V.; Min'kov, G. M.; Rut, O. E.

In: Journal of Crystal Growth, Vol. 117, No. 1-4, 02.02.1992, p. 850-853.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Acceptor states in the dilute magnetic semiconductor p-HgMnTe with Eg > 0 under uniaxial stress

AU - Germanenko, A. V.

AU - Min'kov, G. M.

AU - Rut, O. E.

PY - 1992/2/2

Y1 - 1992/2/2

UR - http://www.scopus.com/inward/record.url?scp=0027108166&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1992HM05800167

U2 - 10.1016/0022-0248(92)90870-O

DO - 10.1016/0022-0248(92)90870-O

M3 - Article

VL - 117

SP - 850

EP - 853

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -