Original languageEnglish
Pages (from-to)90-100
Number of pages11
JournalSuperlattices and Microstructures
Volume120
DOIs
Publication statusPublished - 1 Aug 2018

Fingerprint

Electronic states
atomic structure
Optical properties
optical properties
Defects
defects
electronics
Gallium
Epitaxial layers
gallium
X ray photoelectron spectroscopy
energy of formation
Oxygen vacancies
uniqueness
Photoelectrons
Valence bands
Oxides
Electronic structure
Density functional theory
interstitials

Keywords

  • Defects
  • DFT
  • Epitaxy
  • Gallium oxide
  • Luminescence
  • Semiconductors
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

WoS ResearchAreas Categories

  • Physics, Condensed Matter

Cite this

@article{712820c4eebb4ada962a140cddc4e475,
title = "Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers",
keywords = "Defects, DFT, Epitaxy, Gallium oxide, Luminescence, Semiconductors, XPS",
author = "Zatsepin, {D. A.} and Boukhvalov, {D. W.} and Zatsepin, {A. F.} and Kuznetsova, {Yu A.} and D. Gogova and Shur, {V. Ya} and Esin, {A. A.}",
year = "2018",
month = "8",
day = "1",
doi = "10.1016/j.spmi.2018.05.027",
language = "English",
volume = "120",
pages = "90--100",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers

AU - Zatsepin, D. A.

AU - Boukhvalov, D. W.

AU - Zatsepin, A. F.

AU - Kuznetsova, Yu A.

AU - Gogova, D.

AU - Shur, V. Ya

AU - Esin, A. A.

PY - 2018/8/1

Y1 - 2018/8/1

KW - Defects

KW - DFT

KW - Epitaxy

KW - Gallium oxide

KW - Luminescence

KW - Semiconductors

KW - XPS

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U2 - 10.1016/j.spmi.2018.05.027

DO - 10.1016/j.spmi.2018.05.027

M3 - Article

VL - 120

SP - 90

EP - 100

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -