Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect

Dhananjay K. Sharma, Sara Fateixa, María J. Hortigüela, Reddithota Vidyasagar, Gonzalo Otero-Irurueta, Helena I S Nogueira, Manoj Kumar Singh, Andrei Kholkin

Research output: Research - peer-reviewArticle

LanguageEnglish
Pages62-68
Number of pages7
JournalPhysica B: Condensed Matter
Volume513
DOIs
StatePublished - 15 May 2017

Fingerprint

Graphite
Nitrogen
Defects
Substrates
Graphene
graphene
nitrogen
defects
x rays
Copper
X ray diffraction
Atoms
nitrogen atoms
copper
diffraction
Defect density
Intercalation
Microelectronics
Crystal lattices
Chemical vapor deposition

Keywords

  • CVD
  • Defects
  • Graphene
  • High Resolution-X-ray Photoelectron Spectroscopy (HR-XPS)
  • Nitrogen-doping
  • Raman

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

WoS ResearchAreas Categories

  • Physics, Condensed Matter

Cite this

Sharma, D. K., Fateixa, S., Hortigüela, M. J., Vidyasagar, R., Otero-Irurueta, G., Nogueira, H. I. S., ... Kholkin, A. (2017). Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect. Physica B: Condensed Matter, 513, 62-68. DOI: 10.1016/j.physb.2017.03.004
Sharma, Dhananjay K. ; Fateixa, Sara ; Hortigüela, María J. ; Vidyasagar, Reddithota ; Otero-Irurueta, Gonzalo ; Nogueira, Helena I S ; Singh, Manoj Kumar ; Kholkin, Andrei. / Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect. In: Physica B: Condensed Matter. 2017 ; Vol. 513. pp. 62-68
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keywords = "CVD, Defects, Graphene, High Resolution-X-ray Photoelectron Spectroscopy (HR-XPS), Nitrogen-doping, Raman",
author = "Sharma, {Dhananjay K.} and Sara Fateixa and Hortigüela, {María J.} and Reddithota Vidyasagar and Gonzalo Otero-Irurueta and Nogueira, {Helena I S} and Singh, {Manoj Kumar} and Andrei Kholkin",
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Sharma, DK, Fateixa, S, Hortigüela, MJ, Vidyasagar, R, Otero-Irurueta, G, Nogueira, HIS, Singh, MK & Kholkin, A 2017, 'Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect' Physica B: Condensed Matter, vol 513, pp. 62-68. DOI: 10.1016/j.physb.2017.03.004

Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect. / Sharma, Dhananjay K.; Fateixa, Sara; Hortigüela, María J.; Vidyasagar, Reddithota; Otero-Irurueta, Gonzalo; Nogueira, Helena I S; Singh, Manoj Kumar; Kholkin, Andrei.

In: Physica B: Condensed Matter, Vol. 513, 15.05.2017, p. 62-68.

Research output: Research - peer-reviewArticle

TY - JOUR

T1 - Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect

AU - Sharma,Dhananjay K.

AU - Fateixa,Sara

AU - Hortigüela,María J.

AU - Vidyasagar,Reddithota

AU - Otero-Irurueta,Gonzalo

AU - Nogueira,Helena I S

AU - Singh,Manoj Kumar

AU - Kholkin,Andrei

PY - 2017/5/15

Y1 - 2017/5/15

KW - CVD

KW - Defects

KW - Graphene

KW - High Resolution-X-ray Photoelectron Spectroscopy (HR-XPS)

KW - Nitrogen-doping

KW - Raman

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U2 - 10.1016/j.physb.2017.03.004

DO - 10.1016/j.physb.2017.03.004

M3 - Article

VL - 513

SP - 62

EP - 68

JO - Physica B: Condensed Matter

T2 - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -

Sharma DK, Fateixa S, Hortigüela MJ, Vidyasagar R, Otero-Irurueta G, Nogueira HIS et al. Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect. Physica B: Condensed Matter. 2017 May 15;513:62-68. Available from, DOI: 10.1016/j.physb.2017.03.004