Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Original languageEnglish
Title of host publicationIV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY
EditorsVY Shur
PublisherKnowledge E
Pages57-63
Number of pages7
DOIs
Publication statusPublished - 2016
Event4th Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology - Ekaterinburg
Duration: 23 Jun 201626 Jun 2016

Publication series

NameKnE Materials Science
PublisherKNOWLEDGE E
Volume2016
ISSN (Print)2519-1438

Conference

Conference4th Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology
CityEkaterinburg
Period23/06/201626/06/2016

Keywords

  • dielectric relaxation
  • ferroelectrics
  • domain structure
  • THIN-FILMS
  • CRYSTALS

WoS ResearchAreas Categories

  • Engineering, Manufacturing
  • Engineering, Industrial

Cite this

Esin, A. A., Akhmatkhanov, A. R., & Shur, V. Y. (2016). Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. In VY. Shur (Ed.), IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY (pp. 57-63). (KnE Materials Science; Vol. 2016). Knowledge E. https://doi.org/10.18502/kms.v1i1.563
Esin, A. A. ; Akhmatkhanov, A. R. ; Shur, V. Ya. / Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY. editor / VY Shur. Knowledge E, 2016. pp. 57-63 (KnE Materials Science).
@inproceedings{9800d08111e445288d7f6aa068baaa89,
title = "Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate",
keywords = "dielectric relaxation, ferroelectrics, domain structure, THIN-FILMS, CRYSTALS",
author = "Esin, {A. A.} and Akhmatkhanov, {A. R.} and Shur, {V. Ya.}",
year = "2016",
doi = "10.18502/kms.v1i1.563",
language = "English",
series = "KnE Materials Science",
publisher = "Knowledge E",
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editor = "VY Shur",
booktitle = "IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY",
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}

Esin, AA, Akhmatkhanov, AR & Shur, VY 2016, Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. in VY Shur (ed.), IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY. KnE Materials Science, vol. 2016, Knowledge E, pp. 57-63, 4th Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology, Ekaterinburg, 23/06/2016. https://doi.org/10.18502/kms.v1i1.563

Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. / Esin, A. A.; Akhmatkhanov, A. R.; Shur, V. Ya.

IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY. ed. / VY Shur. Knowledge E, 2016. p. 57-63 (KnE Materials Science; Vol. 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

TY - GEN

T1 - Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate

AU - Esin, A. A.

AU - Akhmatkhanov, A. R.

AU - Shur, V. Ya.

PY - 2016

Y1 - 2016

KW - dielectric relaxation

KW - ferroelectrics

KW - domain structure

KW - THIN-FILMS

KW - CRYSTALS

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U2 - 10.18502/kms.v1i1.563

DO - 10.18502/kms.v1i1.563

M3 - Conference contribution

T3 - KnE Materials Science

SP - 57

EP - 63

BT - IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY

A2 - Shur, VY

PB - Knowledge E

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Esin AA, Akhmatkhanov AR, Shur VY. Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. In Shur VY, editor, IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY. Knowledge E. 2016. p. 57-63. (KnE Materials Science). https://doi.org/10.18502/kms.v1i1.563