Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number045028
Number of pages7
Journal2d materials
Volume8
Issue number4
DOIs
Publication statusPublished - Oct 2021

Keywords

  • dislocations
  • plasticity
  • InSe
  • semiconductors
  • first-principles calculations
  • TOTAL-ENERGY CALCULATIONS
  • MECHANICAL-PROPERTIES
  • ELECTRONIC-STRUCTURE
  • STACKING-FAULT
  • CORE STRUCTURE
  • INITIO
  • OPTOELECTRONICS
  • PLASTICITY
  • ENERGETICS
  • DUCTILE

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Chemistry(all)
  • Materials Science(all)

WoS ResearchAreas Categories

  • Materials Science, Multidisciplinary

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