Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition

P. V. Seredin, V. A. Terekhov, K. A. Barkov, I. N. Arsentyev, A. D. Bondarev

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)62-71
Number of pages10
JournalPhysica B: Condensed Matter
Volume563
DOIs
Publication statusPublished - 15 Jun 2019

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misalignment
Electronic properties
Structural properties
Optical properties
Ions
Plasmas
optical properties
Substrates
electronics
ions
Optical band gaps
Refractive index
Reactive sputtering
refractivity
gallium arsenide
sputtering
Crystalline materials
Plasma deposition
Crystal symmetry
Surface structure

Keywords

  • GAAS
  • GROWTH
  • TEMPERATURE
  • SURFACE
  • PHASE
  • PHOTOLUMINESCENCE
  • HETEROSTRUCTURES
  • MORPHOLOGY
  • WURTZITE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

WoS ResearchAreas Categories

  • Physics, Condensed Matter

Cite this

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title = "Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition",
keywords = "GAAS, GROWTH, TEMPERATURE, SURFACE, PHASE, PHOTOLUMINESCENCE, HETEROSTRUCTURES, MORPHOLOGY, WURTZITE",
author = "Seredin, {P. V.} and Terekhov, {V. A.} and Barkov, {K. A.} and Arsentyev, {I. N.} and Bondarev, {A. D.}",
year = "2019",
month = "6",
day = "15",
doi = "10.1016/j.physb.2019.03.024",
language = "English",
volume = "563",
pages = "62--71",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier BV",

}

Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition. / Seredin, P. V.; Terekhov, V. A.; Barkov, K. A.; Arsentyev, I. N.; Bondarev, A. D.

In: Physica B: Condensed Matter, Vol. 563, 15.06.2019, p. 62-71.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition

AU - Seredin, P. V.

AU - Terekhov, V. A.

AU - Barkov, K. A.

AU - Arsentyev, I. N.

AU - Bondarev, A. D.

PY - 2019/6/15

Y1 - 2019/6/15

KW - GAAS

KW - GROWTH

KW - TEMPERATURE

KW - SURFACE

KW - PHASE

KW - PHOTOLUMINESCENCE

KW - HETEROSTRUCTURES

KW - MORPHOLOGY

KW - WURTZITE

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DO - 10.1016/j.physb.2019.03.024

M3 - Article

VL - 563

SP - 62

EP - 71

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -