Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition

P. V. Seredin, V. A. Terekhov, K. A. Barkov, I. N. Arsentyev, A. D. Bondarev

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)62-71
Number of pages10
JournalPhysica B: Condensed Matter
Volume563
DOIs
Publication statusPublished - 15 Jun 2019

Keywords

  • GAAS
  • GROWTH
  • TEMPERATURE
  • SURFACE
  • PHASE
  • PHOTOLUMINESCENCE
  • HETEROSTRUCTURES
  • MORPHOLOGY
  • WURTZITE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

WoS ResearchAreas Categories

  • Physics, Condensed Matter

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