Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures

P. V. Seredin, H. Leiste, A. S. Lenshin, A. M. Mizerov

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Article number145267
Number of pages14
JournalApplied Surface Science
Volume508
DOIs
Publication statusPublished - 1 Apr 2020

Keywords

  • Gallium nitride (GaN) and silicon carbide
  • Heterostructures
  • MBE
  • Nanoporous silicon
  • VAPOR-PHASE EPITAXY
  • GAN FILMS
  • OPTICAL-PROPERTIES
  • RAMAN
  • SI(111)
  • MORPHOLOGICAL PROPERTIES
  • SIC BUFFER LAYER
  • SPECTROSCOPY
  • SUBSTRATE
  • GROWTH

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces, Coatings and Films
  • Chemistry(all)
  • Surfaces and Interfaces

WoS ResearchAreas Categories

  • Chemistry, Physical
  • Materials Science, Coatings & Films
  • Physics, Applied
  • Physics, Condensed Matter

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