Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures

P. Seredin, D. L. Goloshchapov, A. S. Lenshin, A. M. Mizerov, H. Leiste, M. Rinke, D. S. Zolotukhin, I. N Arsent'ev

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)545-551
Number of pages7
JournalQuantum electronics
Volume49
Issue number6
DOIs
Publication statusPublished - 2019
EventSymposium on Semiconductor Lasers - Physics and Technology - St Petersburg
Duration: 1 Nov 2018 → …

Keywords

  • gallium nitride
  • nanocolumns
  • molecular beam epitaxy
  • porous silicon
  • optical and electronic properties
  • MOLECULAR-BEAM EPITAXY
  • ALGAN/GAN HETEROSTRUCTURES
  • GAN
  • FILMS
  • GROWTH
  • SUBSTRATE
  • OVERGROWTH
  • MORPHOLOGY
  • SURFACES
  • FEATURES

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Statistical and Nonlinear Physics
  • Electrical and Electronic Engineering

WoS ResearchAreas Categories

  • Engineering, Electrical & Electronic
  • Physics, Applied

Cite this

Seredin, P., Goloshchapov, D. L., Lenshin, A. S., Mizerov, A. M., Leiste, H., Rinke, M., ... Arsent'ev, I. N. (2019). Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures. Quantum electronics, 49(6), 545-551. https://doi.org/10.1070/QEL17036
Seredin, P. ; Goloshchapov, D. L. ; Lenshin, A. S. ; Mizerov, A. M. ; Leiste, H. ; Rinke, M. ; Zolotukhin, D. S. ; Arsent'ev, I. N. / Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures. In: Quantum electronics. 2019 ; Vol. 49, No. 6. pp. 545-551.
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author = "P. Seredin and Goloshchapov, {D. L.} and Lenshin, {A. S.} and Mizerov, {A. M.} and H. Leiste and M. Rinke and Zolotukhin, {D. S.} and Arsent'ev, {I. N}",
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Seredin, P, Goloshchapov, DL, Lenshin, AS, Mizerov, AM, Leiste, H, Rinke, M, Zolotukhin, DS & Arsent'ev, IN 2019, 'Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures' Quantum electronics, vol. 49, no. 6, pp. 545-551. https://doi.org/10.1070/QEL17036

Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures. / Seredin, P.; Goloshchapov, D. L.; Lenshin, A. S.; Mizerov, A. M.; Leiste, H.; Rinke, M.; Zolotukhin, D. S.; Arsent'ev, I. N.

In: Quantum electronics, Vol. 49, No. 6, 2019, p. 545-551.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures

AU - Seredin, P.

AU - Goloshchapov, D. L.

AU - Lenshin, A. S.

AU - Mizerov, A. M.

AU - Leiste, H.

AU - Rinke, M.

AU - Zolotukhin, D. S.

AU - Arsent'ev, I. N

PY - 2019

Y1 - 2019

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KW - molecular beam epitaxy

KW - porous silicon

KW - optical and electronic properties

KW - MOLECULAR-BEAM EPITAXY

KW - ALGAN/GAN HETEROSTRUCTURES

KW - GAN

KW - FILMS

KW - GROWTH

KW - SUBSTRATE

KW - OVERGROWTH

KW - MORPHOLOGY

KW - SURFACES

KW - FEATURES

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U2 - 10.1070/QEL17036

DO - 10.1070/QEL17036

M3 - Article

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SP - 545

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IS - 6

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Seredin P, Goloshchapov DL, Lenshin AS, Mizerov AM, Leiste H, Rinke M et al. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures. Quantum electronics. 2019;49(6):545-551. https://doi.org/10.1070/QEL17036