Energy relaxation rate of the two-dimensional hole gas in a GaAs/InGaAs/GaAs quantum well

Research output: Contribution to journalArticleResearchpeer-review

5 Citations (Scopus)
Original languageEnglish
Article number085307
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number8
DOIs
Publication statusPublished - 28 Feb 2011

Fingerprint

Semiconductor quantum wells
Gases
quantum wells
conductivity
Phonons
gases
Carrier concentration
Acoustics
Scattering
Temperature
energy
crossovers
phonons
gallium arsenide
deviation
temperature
acoustics
scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

WoS ResearchAreas Categories

  • Materials Science, Multidisciplinary
  • Physics, Applied
  • Physics, Condensed Matter

Cite this

@article{f9b5e345c6964ddda737e8066d51197c,
title = "Energy relaxation rate of the two-dimensional hole gas in a GaAs/InGaAs/GaAs quantum well",
author = "Soldatov, {I. V.} and Germanenko, {A. V.} and Minkov, {G. M.} and Rut, {O. E.} and Sherstobitov, {A. A.}",
year = "2011",
month = "2",
day = "28",
doi = "10.1103/PhysRevB.83.085307",
language = "English",
volume = "83",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "8",

}

TY - JOUR

T1 - Energy relaxation rate of the two-dimensional hole gas in a GaAs/InGaAs/GaAs quantum well

AU - Soldatov, I. V.

AU - Germanenko, A. V.

AU - Minkov, G. M.

AU - Rut, O. E.

AU - Sherstobitov, A. A.

PY - 2011/2/28

Y1 - 2011/2/28

UR - http://www.scopus.com/inward/record.url?scp=79960982524&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000287797000011

U2 - 10.1103/PhysRevB.83.085307

DO - 10.1103/PhysRevB.83.085307

M3 - Article

VL - 83

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 8

M1 - 085307

ER -