High linear polarization of photoluminescence of GaInP epilayers at low temperature

T. Prutskij, P. Seredin, G. Attolini

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)141-145
Number of pages5
JournalJournal of Luminescence
Volume212
DOIs
Publication statusPublished - 1 Aug 2019

Fingerprint

Epilayers
linear polarization
Photoluminescence
Polarization
photoluminescence
Temperature
Crystal symmetry
polarization
Semiconductors
symmetry
crystals
axial strain
Semiconductor materials
temperature dependence
temperature

ASJC Scopus subject areas

  • Biophysics
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Biochemistry
  • Condensed Matter Physics

WoS ResearchAreas Categories

  • Optics

Cite this

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title = "High linear polarization of photoluminescence of GaInP epilayers at low temperature",
author = "T. Prutskij and P. Seredin and G. Attolini",
year = "2019",
month = "8",
day = "1",
doi = "10.1016/j.jlumin.2019.04.033",
language = "English",
volume = "212",
pages = "141--145",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier BV",

}

High linear polarization of photoluminescence of GaInP epilayers at low temperature. / Prutskij, T.; Seredin, P.; Attolini, G.

In: Journal of Luminescence, Vol. 212, 01.08.2019, p. 141-145.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - High linear polarization of photoluminescence of GaInP epilayers at low temperature

AU - Prutskij, T.

AU - Seredin, P.

AU - Attolini, G.

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DO - 10.1016/j.jlumin.2019.04.033

M3 - Article

VL - 212

SP - 141

EP - 145

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -