Hole transport and valence-band dispersion law in a HgTe quantum well with a normal energy spectrum

G. M. Minkov, A. V. Germanenko, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretski, N. N. Mikhailov

Research output: Contribution to journalArticleResearchpeer-review

10 Citations (Scopus)
Original languageEnglish
Article number165311
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number16
DOIs
Publication statusPublished - 24 Apr 2014

Keywords

  • INTERFACE STATES
  • NARROW-GAP
  • HETEROSTRUCTURES
  • NANOSTRUCTURES
  • SEMICONDUCTOR
  • HG1-XCDXTE

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Hole transport and valence-band dispersion law in a HgTe quantum well with a normal energy spectrum",
keywords = "INTERFACE STATES, NARROW-GAP, HETEROSTRUCTURES, NANOSTRUCTURES, SEMICONDUCTOR, HG1-XCDXTE",
author = "Minkov, {G. M.} and Germanenko, {A. V.} and Rut, {O. E.} and Sherstobitov, {A. A.} and Dvoretski, {S. A.} and Mikhailov, {N. N.}",
year = "2014",
month = "4",
day = "24",
doi = "10.1103/PhysRevB.89.165311",
language = "English",
volume = "89",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "16",

}

Hole transport and valence-band dispersion law in a HgTe quantum well with a normal energy spectrum. / Minkov, G. M.; Germanenko, A. V.; Rut, O. E.; Sherstobitov, A. A.; Dvoretski, S. A.; Mikhailov, N. N.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 89, No. 16, 165311, 24.04.2014.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Hole transport and valence-band dispersion law in a HgTe quantum well with a normal energy spectrum

AU - Minkov, G. M.

AU - Germanenko, A. V.

AU - Rut, O. E.

AU - Sherstobitov, A. A.

AU - Dvoretski, S. A.

AU - Mikhailov, N. N.

PY - 2014/4/24

Y1 - 2014/4/24

KW - INTERFACE STATES

KW - NARROW-GAP

KW - HETEROSTRUCTURES

KW - NANOSTRUCTURES

KW - SEMICONDUCTOR

KW - HG1-XCDXTE

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U2 - 10.1103/PhysRevB.89.165311

DO - 10.1103/PhysRevB.89.165311

M3 - Article

VL - 89

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 16

M1 - 165311

ER -