Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

D. S. Abramkin, M. O. Petrushkov, E. A. Emel’yanov, M. A. Putyato, B. R. Semyagin, A. V. Vasev, M. Yu Esin, I. D. Loshkarev, A. K. Gutakovskii, V. V. Preobrazhenskii, T. S. Shamirzaev

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)181-186
Number of pages6
JournalOptoelectronics, Instrumentation and Data Processing
Volume54
Issue number2
DOIs
Publication statusPublished - 1 Mar 2018

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filters
Annealing
Temperature
Heterojunctions
Surface roughness
annealing
Substrates
surface roughness
roughness
temperature

Keywords

  • dislocation filter
  • epitaxy
  • low-temperature GaAs

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

WoS ResearchAreas Categories

  • Physics, Multidisciplinary

GRNTI

  • 29.00.00 PHYSICS

Level of Research Output

  • VAK List

Cite this

Abramkin, D. S. ; Petrushkov, M. O. ; Emel’yanov, E. A. ; Putyato, M. A. ; Semyagin, B. R. ; Vasev, A. V. ; Esin, M. Yu ; Loshkarev, I. D. ; Gutakovskii, A. K. ; Preobrazhenskii, V. V. ; Shamirzaev, T. S. / Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers. In: Optoelectronics, Instrumentation and Data Processing. 2018 ; Vol. 54, No. 2. pp. 181-186.
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title = "Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers",
keywords = "dislocation filter, epitaxy, low-temperature GaAs",
author = "Abramkin, {D. S.} and Petrushkov, {M. O.} and Emel’yanov, {E. A.} and Putyato, {M. A.} and Semyagin, {B. R.} and Vasev, {A. V.} and Esin, {M. Yu} and Loshkarev, {I. D.} and Gutakovskii, {A. K.} and Preobrazhenskii, {V. V.} and Shamirzaev, {T. S.}",
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language = "English",
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Abramkin, DS, Petrushkov, MO, Emel’yanov, EA, Putyato, MA, Semyagin, BR, Vasev, AV, Esin, MY, Loshkarev, ID, Gutakovskii, AK, Preobrazhenskii, VV & Shamirzaev, TS 2018, 'Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers' Optoelectronics, Instrumentation and Data Processing, vol. 54, no. 2, pp. 181-186. https://doi.org/10.3103/S8756699018020103

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers. / Abramkin, D. S.; Petrushkov, M. O.; Emel’yanov, E. A.; Putyato, M. A.; Semyagin, B. R.; Vasev, A. V.; Esin, M. Yu; Loshkarev, I. D.; Gutakovskii, A. K.; Preobrazhenskii, V. V.; Shamirzaev, T. S.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 54, No. 2, 01.03.2018, p. 181-186.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

AU - Abramkin, D. S.

AU - Petrushkov, M. O.

AU - Emel’yanov, E. A.

AU - Putyato, M. A.

AU - Semyagin, B. R.

AU - Vasev, A. V.

AU - Esin, M. Yu

AU - Loshkarev, I. D.

AU - Gutakovskii, A. K.

AU - Preobrazhenskii, V. V.

AU - Shamirzaev, T. S.

PY - 2018/3/1

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KW - epitaxy

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DO - 10.3103/S8756699018020103

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SP - 181

EP - 186

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

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