Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode

Anton Gusev, Sergei Rukin, Sergei Tsyranov, Olga Perminova, Sergei Lyubutin, Boris Slovikovsky

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)
Original languageEnglish
Article number115012
Number of pages10
JournalSemiconductor Science and Technology
Volume33
Issue number11
DOIs
Publication statusPublished - Nov 2018

Keywords

  • high-power semiconductor switches
  • impact-ionization front
  • triggering voltage rise rate
  • subnanosecond switching process
  • CLOSING SWITCH
  • SILICON
  • FRONTS
  • PULSE
  • SEMICONDUCTORS
  • BREAKDOWN
  • ELECTRON
  • CENTERS
  • DEVICES
  • DIODES

ASJC Scopus subject areas

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

WoS ResearchAreas Categories

  • Engineering, Electrical & Electronic
  • Materials Science, Multidisciplinary
  • Physics, Condensed Matter

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