Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

A. A. Shklyaev, L. Bolotov, V. Poborchii, T. Tada, K. N. Romanyuk

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)107-114
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume83
DOIs
Publication statusPublished - 15 Aug 2018

Fingerprint

Microscopic examination
microscopy
Chemical analysis
Heterojunctions
spatial resolution
Temperature
Surface potential
Substrates
drying
Nanowires
Raman spectroscopy
heterojunctions
surface layers
nanowires
solid state
high resolution

Keywords

  • High-temperature growth
  • Kelvin force microscopy
  • Lateral Si/Ge heterostructures
  • Raman microscopy
  • Surface potential distribution

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

WoS ResearchAreas Categories

  • Engineering, Electrical & Electronic
  • Materials Science, Multidisciplinary
  • Physics, Applied
  • Physics, Condensed Matter

Cite this

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title = "Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures",
keywords = "High-temperature growth, Kelvin force microscopy, Lateral Si/Ge heterostructures, Raman microscopy, Surface potential distribution",
author = "Shklyaev, {A. A.} and L. Bolotov and V. Poborchii and T. Tada and Romanyuk, {K. N.}",
year = "2018",
month = "8",
day = "15",
doi = "10.1016/j.mssp.2018.04.026",
language = "English",
volume = "83",
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journal = "Materials Science in Semiconductor Processing",
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publisher = "Elsevier",

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Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures. / Shklyaev, A. A.; Bolotov, L.; Poborchii, V.; Tada, T.; Romanyuk, K. N.

In: Materials Science in Semiconductor Processing, Vol. 83, 15.08.2018, p. 107-114.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

AU - Shklyaev, A. A.

AU - Bolotov, L.

AU - Poborchii, V.

AU - Tada, T.

AU - Romanyuk, K. N.

PY - 2018/8/15

Y1 - 2018/8/15

KW - High-temperature growth

KW - Kelvin force microscopy

KW - Lateral Si/Ge heterostructures

KW - Raman microscopy

KW - Surface potential distribution

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U2 - 10.1016/j.mssp.2018.04.026

DO - 10.1016/j.mssp.2018.04.026

M3 - Article

VL - 83

SP - 107

EP - 114

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -