Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

A. A. Shklyaev, L. Bolotov, V. Poborchii, T. Tada, K. N. Romanyuk

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)107-114
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume83
DOIs
Publication statusPublished - 15 Aug 2018

Keywords

  • High-temperature growth
  • Kelvin force microscopy
  • Lateral Si/Ge heterostructures
  • Raman microscopy
  • Surface potential distribution
  • HETEROSTRUCTURES
  • GRAPHENE
  • SI(100)
  • GERMANIUM
  • SPECTROSCOPY
  • GE DEPOSITION
  • LATERAL NANOWIRES
  • STRESS
  • STRAIN
  • ISLAND FORMATION

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Materials Science(all)

WoS ResearchAreas Categories

  • Engineering, Electrical & Electronic
  • Materials Science, Multidisciplinary
  • Physics, Condensed Matter
  • Physics, Applied

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