Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

2 Citations (Scopus)
Original languageEnglish
Title of host publicationProceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages279-282
Number of pages4
ISBN (Electronic)9781538649466
DOIs
Publication statusPublished - 13 Jun 2018
Event2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018 - Yekaterinburg, Russian Federation
Duration: 6 May 20188 May 2018

Conference

Conference2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018
CountryRussian Federation
CityYekaterinburg
Period06/05/201808/05/2018

Fingerprint

TiO2
Current voltage characteristics
Oxides
titanium
Titanium
Memristors
Sandwich structures
oxides
sandwich structures
Anodic oxidation
low resistance
high resistance
electric potential
Voltage
Metal foil
Sandwich Structures
foils
tubes
Data storage equipment
Oxidation

Keywords

  • anodic titania
  • memristor
  • nanotubular structure
  • resistive switching
  • titanium dioxide nanotubes

ASJC Scopus subject areas

  • Information Systems
  • Biomedical Engineering
  • Computer Networks and Communications
  • Computer Science Applications
  • Modelling and Simulation
  • Instrumentation
  • Electrical and Electronic Engineering
  • Control and Optimization

Cite this

Dorosheva, I. B., Vokhmintsev, A. S., Kamalov, R. V., Gryaznov, A. O., & Weinstein, I. A. (2018). Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. In Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018 (pp. 279-282). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/USBEREIT.2018.8384604
Dorosheva, Irina B. ; Vokhmintsev, Alexander S. ; Kamalov, Robert V. ; Gryaznov, Aleksey O. ; Weinstein, Ilya A. / Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 279-282
@inproceedings{85751e113bda4b15959eb9441358e54d,
title = "Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure",
keywords = "anodic titania, memristor, nanotubular structure, resistive switching, titanium dioxide nanotubes",
author = "Dorosheva, {Irina B.} and Vokhmintsev, {Alexander S.} and Kamalov, {Robert V.} and Gryaznov, {Aleksey O.} and Weinstein, {Ilya A.}",
year = "2018",
month = "6",
day = "13",
doi = "10.1109/USBEREIT.2018.8384604",
language = "English",
pages = "279--282",
booktitle = "Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Dorosheva, IB, Vokhmintsev, AS, Kamalov, RV, Gryaznov, AO & Weinstein, IA 2018, Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. in Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., pp. 279-282, 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018, Yekaterinburg, Russian Federation, 06/05/2018. https://doi.org/10.1109/USBEREIT.2018.8384604

Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. / Dorosheva, Irina B.; Vokhmintsev, Alexander S.; Kamalov, Robert V.; Gryaznov, Aleksey O.; Weinstein, Ilya A.

Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 279-282.

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

TY - GEN

T1 - Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure

AU - Dorosheva, Irina B.

AU - Vokhmintsev, Alexander S.

AU - Kamalov, Robert V.

AU - Gryaznov, Aleksey O.

AU - Weinstein, Ilya A.

PY - 2018/6/13

Y1 - 2018/6/13

KW - anodic titania

KW - memristor

KW - nanotubular structure

KW - resistive switching

KW - titanium dioxide nanotubes

UR - http://www.scopus.com/inward/record.url?scp=85049888588&partnerID=8YFLogxK

U2 - 10.1109/USBEREIT.2018.8384604

DO - 10.1109/USBEREIT.2018.8384604

M3 - Conference contribution

SP - 279

EP - 282

BT - Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Dorosheva IB, Vokhmintsev AS, Kamalov RV, Gryaznov AO, Weinstein IA. Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. In Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 279-282 https://doi.org/10.1109/USBEREIT.2018.8384604