Renormalization of hole-hole interaction at decreasing Drude conductivity: Gated GaAs/ Inx Ga1-x As GaAs heterostructures

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)
Original languageEnglish
Article number165314
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number16
DOIs
Publication statusPublished - 23 Oct 2007

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Heterojunctions
conductivity
interactions
gallium arsenide
Compensation and Redress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

WoS ResearchAreas Categories

  • Materials Science, Multidisciplinary
  • Physics, Applied
  • Physics, Condensed Matter

Cite this

@article{0a589d329b51494599a5ca80bb1258b4,
title = "Renormalization of hole-hole interaction at decreasing Drude conductivity: Gated GaAs/ Inx Ga1-x As GaAs heterostructures",
author = "Minkov, {G. M.} and Germanenko, {A. V.} and Sherstobitov, {A. A.} and Rut, {O. E.} and Zvonkov, {B. N.}",
year = "2007",
month = "10",
day = "23",
doi = "10.1103/PhysRevB.76.165314",
language = "English",
volume = "76",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "16",

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AU - Germanenko, A. V.

AU - Sherstobitov, A. A.

AU - Rut, O. E.

AU - Zvonkov, B. N.

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JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

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