Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)383-387
Number of pages5
JournalSemiconductor Science and Technology
Volume8
Issue number3
DOIs
Publication statusPublished - Mar 1993

ASJC Scopus subject areas

  • Materials Chemistry
  • Electrical and Electronic Engineering

WoS ResearchAreas Categories

  • Engineering, Electrical & Electronic
  • Materials Science, Multidisciplinary
  • Physics, Condensed Matter

Cite this

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title = "Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field",
author = "Germanenko, {A. V.} and Kruzhaev, {V. V.} and Minkov, {G. M.} and Rumyantsev, {E. L.} and Rut, {O. E.}",
year = "1993",
month = "3",
doi = "10.1088/0268-1242/8/3/013",
language = "English",
volume = "8",
pages = "383--387",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing (IOP)",
number = "3",

}

TY - JOUR

T1 - Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field

AU - Germanenko, A. V.

AU - Kruzhaev, V. V.

AU - Minkov, G. M.

AU - Rumyantsev, E. L.

AU - Rut, O. E.

PY - 1993/3

Y1 - 1993/3

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U2 - 10.1088/0268-1242/8/3/013

DO - 10.1088/0268-1242/8/3/013

M3 - Article

VL - 8

SP - 383

EP - 387

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

ER -