Transient Current During Switching in Increasing Electric Field as a Basis for a New Testing Method

V. Ya. Shur, E. L. Rumyantsev, S. D. Makarov, A. L. Subbotin, V. V. Volegov

Research output: Contribution to journalArticleResearchpeer-review

17 Citations (Scopus)
Original languageEnglish
Pages (from-to)223-230
Number of pages8
JournalIntegrated Ferroelectrics
Volume10
Issue number1-4
DOIs
Publication statusPublished - 1 Oct 1995

Fingerprint

time dependence
Electric fields
Single crystals
Thin films
Kinetics
electric fields
single crystals
kinetics
Testing
thin films

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

WoS ResearchAreas Categories

  • Engineering, Electrical & Electronic
  • Physics, Applied
  • Physics, Condensed Matter

Cite this

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title = "Transient Current During Switching in Increasing Electric Field as a Basis for a New Testing Method",
author = "Shur, {V. Ya.} and Rumyantsev, {E. L.} and Makarov, {S. D.} and Subbotin, {A. L.} and Volegov, {V. V.}",
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journal = "Integrated Ferroelectrics",
issn = "1058-4587",
publisher = "Gordon and Breach Science Publishers",
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}

Transient Current During Switching in Increasing Electric Field as a Basis for a New Testing Method. / Shur, V. Ya.; Rumyantsev, E. L.; Makarov, S. D.; Subbotin, A. L.; Volegov, V. V.

In: Integrated Ferroelectrics, Vol. 10, No. 1-4, 01.10.1995, p. 223-230.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Shur, V. Ya.

AU - Rumyantsev, E. L.

AU - Makarov, S. D.

AU - Subbotin, A. L.

AU - Volegov, V. V.

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EP - 230

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

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