Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

D. S. Abramkin, T. S. Shamirzaev

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)703-710
Number of pages8
JournalSemiconductors
Volume53
Issue number5
DOIs
Publication statusPublished - 1 May 2019

Fingerprint

Heterojunctions
energy spectra
Semiconductor materials
strain distribution
Substrates
spin dynamics
Spin dynamics
conduction bands
excitons
Electronic states
Conduction bands
Excitons
Band structure
electronics
LDS 751

Keywords

  • QUANTUM DOTS
  • DEFORMATION POTENTIALS
  • V SEMICONDUCTORS
  • SPIN DYNAMICS
  • INSB/ALAS
  • EXCITON
  • GAAS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

WoS ResearchAreas Categories

  • Physics, Condensed Matter

Cite this

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title = "Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates",
keywords = "QUANTUM DOTS, DEFORMATION POTENTIALS, V SEMICONDUCTORS, SPIN DYNAMICS, INSB/ALAS, EXCITON, GAAS",
author = "Abramkin, {D. S.} and Shamirzaev, {T. S.}",
year = "2019",
month = "5",
day = "1",
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language = "English",
volume = "53",
pages = "703--710",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
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}

Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates. / Abramkin, D. S.; Shamirzaev, T. S.

In: Semiconductors, Vol. 53, No. 5, 01.05.2019, p. 703-710.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Abramkin, D. S.

AU - Shamirzaev, T. S.

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KW - GAAS

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DO - 10.1134/S1063782619050026

M3 - Article

VL - 53

SP - 703

EP - 710

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

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