Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

1 Citation (Scopus)
Original languageEnglish
Title of host publicationProceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages348-351
Number of pages4
ISBN (Electronic)9781538649466
DOIs
Publication statusPublished - 13 Jun 2018
Event2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018 - Yekaterinburg, Russian Federation
Duration: 6 May 20188 May 2018

Conference

Conference2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018
CountryRussian Federation
CityYekaterinburg
Period06/05/201808/05/2018

Fingerprint

Memristors
synapses
Synapse
electrical resistivity
Acoustic impedance
electric potential
Current voltage characteristics
electrical resistance
Voltage
equivalent circuits
zirconium oxides
plastic properties
Equivalent circuits
Zirconia
Magnetron sputtering
Plasticity
Masks
magnetron sputtering
Magnetron Sputtering
Equivalent Circuit

Keywords

  • anodization
  • memristor
  • resistive switching
  • zirconia nanotubes

ASJC Scopus subject areas

  • Information Systems
  • Biomedical Engineering
  • Computer Networks and Communications
  • Computer Science Applications
  • Modelling and Simulation
  • Instrumentation
  • Electrical and Electronic Engineering
  • Control and Optimization

Cite this

Vokhmintsev, A. S., Kamalov, R. V., Kozhevina, A. V., Petrenyov, I. A., Martemyanov, N. A., & Weinstein, I. A. (2018). Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure. In Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018 (pp. 348-351). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/USBEREIT.2018.8384620
Vokhmintsev, Alexander S. ; Kamalov, Robert V. ; Kozhevina, Anna V. ; Petrenyov, Ilya A. ; Martemyanov, Nikolay A. ; Weinstein, Ilya A. / Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure. Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 348-351
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title = "Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure",
keywords = "anodization, memristor, resistive switching, zirconia nanotubes",
author = "Vokhmintsev, {Alexander S.} and Kamalov, {Robert V.} and Kozhevina, {Anna V.} and Petrenyov, {Ilya A.} and Martemyanov, {Nikolay A.} and Weinstein, {Ilya A.}",
year = "2018",
month = "6",
day = "13",
doi = "10.1109/USBEREIT.2018.8384620",
language = "English",
pages = "348--351",
booktitle = "Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

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Vokhmintsev, AS, Kamalov, RV, Kozhevina, AV, Petrenyov, IA, Martemyanov, NA & Weinstein, IA 2018, Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure. in Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., pp. 348-351, 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018, Yekaterinburg, Russian Federation, 06/05/2018. https://doi.org/10.1109/USBEREIT.2018.8384620

Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure. / Vokhmintsev, Alexander S.; Kamalov, Robert V.; Kozhevina, Anna V.; Petrenyov, Ilya A.; Martemyanov, Nikolay A.; Weinstein, Ilya A.

Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 348-351.

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

TY - GEN

T1 - Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure

AU - Vokhmintsev, Alexander S.

AU - Kamalov, Robert V.

AU - Kozhevina, Anna V.

AU - Petrenyov, Ilya A.

AU - Martemyanov, Nikolay A.

AU - Weinstein, Ilya A.

PY - 2018/6/13

Y1 - 2018/6/13

KW - anodization

KW - memristor

KW - resistive switching

KW - zirconia nanotubes

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U2 - 10.1109/USBEREIT.2018.8384620

DO - 10.1109/USBEREIT.2018.8384620

M3 - Conference contribution

SP - 348

EP - 351

BT - Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018

PB - Institute of Electrical and Electronics Engineers Inc.

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Vokhmintsev AS, Kamalov RV, Kozhevina AV, Petrenyov IA, Martemyanov NA, Weinstein IA. Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure. In Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 348-351 https://doi.org/10.1109/USBEREIT.2018.8384620