ИЗЛУЧАТЕЛЬНАЯ АННИГИЛЯЦИЯ P-D-ЭКСИТОНОВ В ТВЕРДЫХ РАСТВОРАХ NI XZN 1-XO

Владимир Николаевич Чурманов, Виктор Иванович Соколов, Владимир Алексеевич Пустоваров, Владимир Юрьевич Иванов, Никита Борисович Груздев, Петр Сергеевич Соколов, Андрей Николаевич Баранов

Resultado de la investigación: Article

Resumen

The temperature dependence of two narrow luminescence lines I 1 and I 2 in solid state solution Ni 0.6Zn 0.4O have been studied. It is shown that intensity of narrow lines decreases with increasing of temperature. The dependence is well described by Mott law in temperature range 10-50 K. We have been observed a broadening of the lines and shift towards low energies with temperature growing. Such behavior is different for I 1 and I 2 so we assume various physical origin of investigated lines. Taking into account the strong decreasing of the lines with temperature growing, similar to donor and acceptor excitons in II-VI compounds doped with 3d elements and shifting of the lines we suppose that I 1 and I 2 lines arise due to p - d exciton annihilation.
Título traducido de la contribuciónp-d exciton annihilation in solid state solutions Ni xZn 1-xO
Idioma originalRussian
Páginas (desde-hasta)222-226
Número de páginas5
PublicaciónИзвестия высших учебных заведений. Физика
Volumen57
N.º12-3
EstadoPublished - 2014

GRNTI

  • 29.00.00 PHYSICS

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