Resumen
The longitudinal ρ_ xx and Hall ρ_ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n -In_0.9Ga_0.1As/In_0.81Al_0.19As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance ρ_ xx peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.
Título traducido de la contribución | Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
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Idioma original | Russian |
Páginas (desde-hasta) | 1447-1454 |
Número de páginas | 8 |
Publicación | Физика и техника полупроводников |
Volumen | 52 |
N.º | 12 |
DOI | |
Estado | Published - 2018 |
GRNTI
- 29.00.00 PHYSICS
Level of Research Output
- VAK List