The longitudinal ρ_ xx and Hall ρ_ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n -In_0.9Ga_0.1As/In_0.81Al_0.19As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance ρ_ xx peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.
|Título traducido de la contribución||Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures|
|Número de páginas||8|
|Publicación||Физика и техника полупроводников|
|Estado||Published - 2018|
- 29.00.00 PHYSICS
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