Resumen
FIELD: chemistry.
SUBSTANCE: invention can be used in microelectronic equipment with low currents and voltages, where switching is required in time intervals of 20 to 70 minutes at 10-150 °C. The resistive material contains silver sulfide, germanium sulfide, non-stoichiometric, stoichiometric arsenic sulfide and 7 atomic percent of carbon in the form of single-wall nanotubes according to the empirical formula: AgGe1+xAs1-x(S+CNT)3, where 0.4≤x≤0.6.
EFFECT: provision of electrical conductivity relaxation time from 4 to 18 seconds and electrical resistivity of 106-109 Ohm⋅m, in the temperature range of 10-150 degrees.
SUBSTANCE: invention can be used in microelectronic equipment with low currents and voltages, where switching is required in time intervals of 20 to 70 minutes at 10-150 °C. The resistive material contains silver sulfide, germanium sulfide, non-stoichiometric, stoichiometric arsenic sulfide and 7 atomic percent of carbon in the form of single-wall nanotubes according to the empirical formula: AgGe1+xAs1-x(S+CNT)3, where 0.4≤x≤0.6.
EFFECT: provision of electrical conductivity relaxation time from 4 to 18 seconds and electrical resistivity of 106-109 Ohm⋅m, in the temperature range of 10-150 degrees.
| Título traducido de la contribución | RESISTIVE MATERIAL BASED ON GLASS CHALCOGENIDES WITH NANOTUBES: patent of invention |
|---|---|
| Idioma original | Russian |
| Número de patente | 2614942 |
| CIP | H01C 7/00 |
| Fecha de introducción | 31/12/2015 |
| Estado | Published - 31 mar. 2017 |