Способ калибровки слитка полупроводникового материала: патент на изобретение

Resultado de la investigación: Patent

Resumen

FIELD: electrical engineering. SUBSTANCE: invention relates to the field of electronic products manufacturing, which workpiece is the semiconductor material ingot, which requires calibration, i.e., the cylindrical surface production. In the semiconductor material ingot calibration method, including roughing and finishing, finishing is performed by grinding with diamond wheels with a grain size of 160–250 mcm, and finishing is performed by turning with the cutting depth of 250–350 mcm with the feed of 500–700 mcm/rpm by the diamond blade tool, which main cutting edge has a rounding radius of 0.2–0.5 mcm and is set parallel to the axis. EFFECT: technical result consists in increase in the ingot surface layer quality, reduction in the damaged surface layer after processing, increase in the process productivity, eliminating the long-lasting finishing grinding, replacing the blade processing.
Título traducido de la contribuciónSEMICONDUCTOR MATERIAL INGOT CALIBRATION METHOD
Idioma originalRussian
Número de patente2682564
CIPH01L 22/12
Fecha de introducción09/04/2018
EstadoPublished - 19 mar 2019

GRNTI

  • 29.03.00

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