Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode

Anton Gusev, Sergei Rukin, Sergei Tsyranov, Olga Perminova, Sergei Lyubutin, Boris Slovikovsky

Resultado de la investigación: Articlerevisión exhaustiva

2 Citas (Scopus)
Idioma originalEnglish
Número de artículo115012
Número de páginas10
PublicaciónSemiconductor Science and Technology
Volumen33
N.º11
DOI
EstadoPublished - nov 2018

ASJC Scopus subject areas

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

WoS ResearchAreas Categories

  • Engineering, Electrical & Electronic
  • Materials Science, Multidisciplinary
  • Physics, Condensed Matter

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