@inproceedings{55f3933a1cd54bc2a993a3702f443d2b,
title = "Parametric layout cell design of N-MOS transistor with enhanced radiation hardened properties",
author = "Serazetdinov, {A. R.} and Atkin, {E. V.} and Khokhlov, {K. O.}",
year = "2020",
month = dec,
day = "9",
doi = "10.1063/5.0036567",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "Volkovich, {Vladimir A.} and Kashin, {Ilya V.} and Smirnov, {Andrey A.} and Narkhov, {Evgeniy D.}",
booktitle = "VII International Young Researchers'' Conference - Physics, Technology, Innovations, PTI 2020",
address = "United States",
note = "7th International Young Researchers'' Conference on Physics, Technology, Innovations, PTI 2020 ; Conference date: 18-05-2020 Through 22-05-2020",
}