ОСОБЕННОСТИ КРИСТАЛЛОГРАФИЧЕСКОЙ СТРУКТУРЫ БУФЕРНЫХ СЛОЕВ CEO2 НА R-AL2O3 ПОЛУЧЕННЫХ МЕТОДОМ ИМПУЛЬСНОГО ЛАЗЕРНОГО ОСАЖДЕНИЯ

Александр Павлович Носов, С. С. Дубинин, В. И. Осотов

Resultado de pesquisa: Article

Resumo

The paper presents the results of structural studies of CeO2 buffer layers grown by pulsed laser deposition on single-crystal substrates of r-Al2O3 ( ) at a substrate temperature of 750C. It was shown experimentally that when the oxygen pressure changes during growth, while maintaining the remaining growth parameters unchanged, it is possible to obtain buffer layers with different crystallographic orientations: at an oxygen pressure of 0.002 mbar, the buffer layers have an orientation of (111), and at an oxygen pressure of 0.2 mbar (002). The results obtained may be of interest for the preparation of epitaxial films and nanoheterostructures with layers of high-temperature superconductors and doped manganites on r-Al2O3 single-crystal substrates with CeO2 buffer layers.
Título traduzido da contribuiçãoFEATURES OF CRYSTALLOGRAPHIC STRUCTURE OF CeO2 BUFFER LAYERS ON r-Al2O3 OBTAINED BY PULSE LASER DEPOSITION METHOD
Idioma originalRussian
Páginas (de-até)26-29
Número de páginas4
RevistaМеждународный научно-исследовательский журнал
Número de emissão12-1 (90)
DOIs
Estado da publicaçãoPublished - 2019

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  • VAK List

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