РЕЛАКСАЦИОННЫЕ ЭФФЕКТЫ В CD48.6MN11.4AS40 И CD50.3MN8.2AS41.5 ПРИ ВЫСОКИХ ДАВЛЕНИЯХ

The results of experimental studies of the electrical resistance of the composites Cd48.6Mn11.4As40 and Cd50.3Mn8.2As41.5 at high pressures up to 50 GPa are presented. The samples are composites consisting of ferromagnetic MnAs granules randomly located in the bulk of the Cd3As2 semiconductor matrix. The influence of high pressure on the electrophysical properties of composites was investigated in a high-pressure chamber with diamond anvils of the “rounded cone-plane” type. To assess the role of relaxation effects due to plastic deformation of materials, for some fixed values of the applied load, we measured the dependences of the electrical resistance R on the time t of the load, analyzing the behavior of the dependences R (t). The relaxation effects due to plastic deformation of materials in the pressure range 28-34 are studied. An analysis of the dependence of the values of the relaxation time of electrical resistance on pressure made it possible to establish that in the generalized intervals 18-24 GPa and 26-34 GPa for both materials and in the region 38-44 GPa for the sample Cd50.3Mn8.2As41.5 , their significant increase is observed. This indicates the possibility of realizing in these areas the pressures of a structural or electronic phase transition.