Effectively releasing tensile stress in AlN thick film for low-defect-density AlN/sapphire template

Пресса/СМИ: другое

Период20 июл 2020

Материалы СМИ

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Материалы СМИ

  • ЗаголовокEffectively releasing tensile stress in AlN thick film for low-defect-density AlN/sapphire template
    Степень признанияМеждународная
    Имя средства информации/СМИ Juno Publishing and Media Solutions Ltd
    Тип подачи информацииВеб
    СтранаВеликобритания
    Дата публикации20/07/2020
    ОписаниеResearchers in China have demonstrated how to effectively release tensile stress in aluminium nitride (AlN) thick film by using high-temperature (HT) metal-organic chemical vapor deposition (MOCVD), permitting the growth of low-defect-density AlN/sapphire template [Chenguang He et al, ‘Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids’, J. Phys. D: Appl. Phys. 53 (2020) 405303]. The team hopes that this technique can enable improved performance for deep-ultraviolet light-emitting diodes (DUV LEDs).
    URL-адресwww.semiconductor-today.com/news_items/2020/jul/gisit-240720.shtml
    ПерсоныЮрий Львович Райхер