Changes in the opto-electronic properties of CuInSe2 following ion implantation

R. D. Tomlinson, A. E. Hill, M. Imanieh, R. D. Pilkington, A. Roodbarmohammadi, M. A. Slifkin, M. V. Yakushev

Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

26 Цитирования (Scopus)
Язык оригиналаАнглийский
Страницы (с-по)659-663
Число страниц5
ЖурналJournal of Electronic Materials
Том20
Номер выпуска9
DOI
СостояниеОпубликовано - 1 сен 1991

Отпечаток

Ion implantation
Electronic properties
ion implantation
electronics
implantation
Single crystals
Neon
Oxygen
Helium
single crystals
Photoconductivity
Surface states
oxygen
thin films
Ion bombardment
photoconductivity
neon
crystals
bombardment
absorbers

Ключевые слова

    Предметные области ASJC Scopus

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Цитировать

    Tomlinson, R. D., Hill, A. E., Imanieh, M., Pilkington, R. D., Roodbarmohammadi, A., Slifkin, M. A., & Yakushev, M. V. (1991). Changes in the opto-electronic properties of CuInSe2 following ion implantation. Journal of Electronic Materials, 20(9), 659-663. https://doi.org/10.1007/BF02654535
    Tomlinson, R. D. ; Hill, A. E. ; Imanieh, M. ; Pilkington, R. D. ; Roodbarmohammadi, A. ; Slifkin, M. A. ; Yakushev, M. V. / Changes in the opto-electronic properties of CuInSe2 following ion implantation. В: Journal of Electronic Materials. 1991 ; Том 20, № 9. стр. 659-663.
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    Tomlinson, RD, Hill, AE, Imanieh, M, Pilkington, RD, Roodbarmohammadi, A, Slifkin, MA & Yakushev, MV 1991, 'Changes in the opto-electronic properties of CuInSe2 following ion implantation' Journal of Electronic Materials, том. 20, № 9, стр. 659-663. https://doi.org/10.1007/BF02654535

    Changes in the opto-electronic properties of CuInSe2 following ion implantation. / Tomlinson, R. D.; Hill, A. E.; Imanieh, M.; Pilkington, R. D.; Roodbarmohammadi, A.; Slifkin, M. A.; Yakushev, M. V.

    В: Journal of Electronic Materials, Том 20, № 9, 01.09.1991, стр. 659-663.

    Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

    TY - JOUR

    T1 - Changes in the opto-electronic properties of CuInSe2 following ion implantation

    AU - Tomlinson, R. D.

    AU - Hill, A. E.

    AU - Imanieh, M.

    AU - Pilkington, R. D.

    AU - Roodbarmohammadi, A.

    AU - Slifkin, M. A.

    AU - Yakushev, M. V.

    PY - 1991/9/1

    Y1 - 1991/9/1

    KW - CuInSe

    KW - implantation

    KW - photoconductivity

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    U2 - 10.1007/BF02654535

    DO - 10.1007/BF02654535

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    VL - 20

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    JO - Journal of Electronic Materials

    JF - Journal of Electronic Materials

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    Tomlinson RD, Hill AE, Imanieh M, Pilkington RD, Roodbarmohammadi A, Slifkin MA и соавт. Changes in the opto-electronic properties of CuInSe2 following ion implantation. Journal of Electronic Materials. 1991 Сент. 1;20(9):659-663. https://doi.org/10.1007/BF02654535