Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films

Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

Язык оригиналаАнглийский
Страницы (с-по)853-859
Число страниц7
ЖурналSemiconductors
Том53
Номер выпуска6
DOI
СостояниеОпубликовано - 1 июн 2019

Отпечаток

Semiconductor materials
Oxygen
Tin
oxygen
Electron transitions
Chemical analysis
adhesives
Etching
tin
Adhesives
surface layers
Energy gap
etching
Ions
X ray diffraction
Oxidation
conductivity
oxidation
diffraction
ions

Ключевые слова

    Предметные области ASJC Scopus

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Atomic and Molecular Physics, and Optics

    Предметные области WoS

    • Физика, Конденсированных сред

    Цитировать

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    title = "Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films",
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    author = "Maskaeva, {L. N.} and Fedorova, {E. A.} and Markov, {V. F.} and Kuznetsov, {M. V.} and Lipina, {O. A.}",
    year = "2019",
    month = "6",
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    Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films. / Maskaeva, L. N.; Fedorova, E. A.; Markov, V. F.; Kuznetsov, M. V.; Lipina, O. A.

    В: Semiconductors, Том 53, № 6, 01.06.2019, стр. 853-859.

    Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

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    AU - Fedorova, E. A.

    AU - Markov, V. F.

    AU - Kuznetsov, M. V.

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