DETERMINATION OF THE DEFORMATION POTENTIAL CONSTANTS OF HGCDTE

A. V. Germanenko; V. A. Larionova

DETERMINATION OF THE DEFORMATION POTENTIAL CONSTANTS OF HGCDTE

Результат исследований: Вклад в журнал › Статья

Язык оригинала	Английский
Страницы (с-по)	1099-1101
Число страниц	3
Журнал	Semiconductors
Том	24
Номер выпуска	10
Состояние	Опубликовано - окт 1990

Предметные области WoS

Физика, Конденсированных сред

Ссылки

https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1990FH82200013

Цитировать

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title = "DETERMINATION OF THE DEFORMATION POTENTIAL CONSTANTS OF HGCDTE",

keywords = "UNIAXIAL DEFORMATION, ENERGY-GAP, HGTE, HG1-XCDXTE",

author = "Germanenko, {A. V.} and Larionova, {V. A.}",

year = "1990",

month = oct,

language = "English",

volume = "24",

pages = "1099--1101",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "American Institute of Physics Publising LLC",

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}

TY - JOUR

T1 - DETERMINATION OF THE DEFORMATION POTENTIAL CONSTANTS OF HGCDTE

AU - Germanenko, A. V.

AU - Larionova, V. A.

PY - 1990/10

Y1 - 1990/10

KW - UNIAXIAL DEFORMATION

KW - ENERGY-GAP

KW - HGTE

KW - HG1-XCDXTE

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1990FH82200013

M3 - Article

VL - 24

SP - 1099

EP - 1101

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -