Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate

Результат исследований: Глава в книге, отчете, сборнике статейМатериалы конференцииНаучно-исследовательскаярецензирование

Язык оригиналаАнглийский
Название основной публикацииIV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY
РедакторыVY Shur
ИздательKNOWLEDGE E
Страницы57-63
Число страниц7
DOI
СостояниеОпубликовано - 2016
Событие4th Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology - Ekaterinburg
Продолжительность: 23 июн 201626 июн 2016

Серия публикаций

НазваниеKnE Materials Science
ИздательKNOWLEDGE E
Том2016
ISSN (печатное издание)2519-1438

Конференция

Конференция4th Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology
ГородEkaterinburg
Период23/06/201626/06/2016

Ключевые слова

    Предметные области WoS

    • Технологии, Машиностроение
    • Технологии, Промышленные

    Цитировать

    Esin, A. A., Akhmatkhanov, A. R., & Shur, V. Y. (2016). Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. В VY. Shur (Ред.), IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY (стр. 57-63). (KnE Materials Science; Том 2016). KNOWLEDGE E. https://doi.org/10.18502/kms.v1i1.563
    Esin, A. A. ; Akhmatkhanov, A. R. ; Shur, V. Ya. / Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY. редактор / VY Shur. KNOWLEDGE E, 2016. стр. 57-63 (KnE Materials Science).
    @inproceedings{9800d08111e445288d7f6aa068baaa89,
    title = "Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate",
    keywords = "dielectric relaxation, ferroelectrics, domain structure, THIN-FILMS, CRYSTALS",
    author = "Esin, {A. A.} and Akhmatkhanov, {A. R.} and Shur, {V. Ya.}",
    year = "2016",
    doi = "10.18502/kms.v1i1.563",
    language = "English",
    series = "KnE Materials Science",
    publisher = "KNOWLEDGE E",
    pages = "57--63",
    editor = "VY Shur",
    booktitle = "IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY",
    address = "Unknown",

    }

    Esin, AA, Akhmatkhanov, AR & Shur, VY 2016, Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. в VY Shur (ред.), IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY. KnE Materials Science, том. 2016, KNOWLEDGE E, стр. 57-63, 4th Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology, Ekaterinburg, 23/06/2016. https://doi.org/10.18502/kms.v1i1.563

    Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. / Esin, A. A.; Akhmatkhanov, A. R.; Shur, V. Ya.

    IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY. ред. / VY Shur. KNOWLEDGE E, 2016. стр. 57-63 (KnE Materials Science; Том 2016).

    Результат исследований: Глава в книге, отчете, сборнике статейМатериалы конференцииНаучно-исследовательскаярецензирование

    TY - GEN

    T1 - Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate

    AU - Esin, A. A.

    AU - Akhmatkhanov, A. R.

    AU - Shur, V. Ya.

    PY - 2016

    Y1 - 2016

    KW - dielectric relaxation

    KW - ferroelectrics

    KW - domain structure

    KW - THIN-FILMS

    KW - CRYSTALS

    UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000395106000011

    U2 - 10.18502/kms.v1i1.563

    DO - 10.18502/kms.v1i1.563

    M3 - Conference contribution

    T3 - KnE Materials Science

    SP - 57

    EP - 63

    BT - IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY

    A2 - Shur, VY

    PB - KNOWLEDGE E

    ER -

    Esin AA, Akhmatkhanov AR, Shur VY. Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate. В Shur VY, редактор, IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY. KNOWLEDGE E. 2016. стр. 57-63. (KnE Materials Science). https://doi.org/10.18502/kms.v1i1.563