Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition

P. V. Seredin, V. A. Terekhov, K. A. Barkov, I. N. Arsentyev, A. D. Bondarev

Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

Язык оригиналаАнглийский
Страницы (с-по)62-71
Число страниц10
ЖурналPhysica B: Condensed Matter
Том563
DOI
СостояниеОпубликовано - 15 июн 2019

Отпечаток

misalignment
Electronic properties
Structural properties
Optical properties
Ions
Plasmas
optical properties
Substrates
electronics
ions
Optical band gaps
Refractive index
Reactive sputtering
refractivity
gallium arsenide
sputtering
Crystalline materials
Plasma deposition
Crystal symmetry
Surface structure

Ключевые слова

    Предметные области ASJC Scopus

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Предметные области WoS

    • Физика, Конденсированных сред

    Цитировать

    @article{70724bc8351640c59e6fb89399f21c40,
    title = "Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition",
    keywords = "GAAS, GROWTH, TEMPERATURE, SURFACE, PHASE, PHOTOLUMINESCENCE, HETEROSTRUCTURES, MORPHOLOGY, WURTZITE",
    author = "Seredin, {P. V.} and Terekhov, {V. A.} and Barkov, {K. A.} and Arsentyev, {I. N.} and Bondarev, {A. D.}",
    year = "2019",
    month = "6",
    day = "15",
    doi = "10.1016/j.physb.2019.03.024",
    language = "English",
    volume = "563",
    pages = "62--71",
    journal = "Physica B: Condensed Matter",
    issn = "0921-4526",
    publisher = "Elsevier BV",

    }

    Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition. / Seredin, P. V.; Terekhov, V. A.; Barkov, K. A.; Arsentyev, I. N.; Bondarev, A. D.

    В: Physica B: Condensed Matter, Том 563, 15.06.2019, стр. 62-71.

    Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

    TY - JOUR

    T1 - Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition

    AU - Seredin, P. V.

    AU - Terekhov, V. A.

    AU - Barkov, K. A.

    AU - Arsentyev, I. N.

    AU - Bondarev, A. D.

    PY - 2019/6/15

    Y1 - 2019/6/15

    KW - GAAS

    KW - GROWTH

    KW - TEMPERATURE

    KW - SURFACE

    KW - PHASE

    KW - PHOTOLUMINESCENCE

    KW - HETEROSTRUCTURES

    KW - MORPHOLOGY

    KW - WURTZITE

    UR - http://www.scopus.com/inward/record.url?scp=85064008102&partnerID=8YFLogxK

    UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000464558000008

    U2 - 10.1016/j.physb.2019.03.024

    DO - 10.1016/j.physb.2019.03.024

    M3 - Article

    VL - 563

    SP - 62

    EP - 71

    JO - Physica B: Condensed Matter

    JF - Physica B: Condensed Matter

    SN - 0921-4526

    ER -