High-pressure behavior of superconducting boron-doped diamond

Mahmoud Abdel-Hafiez, Dinesh Kumar, R. Thiyagarajan, Q. Zhang, R. T. Howie, K. Sethupathi, O. Volkova, A. Vasiliev, W. H. Yang, H. K. Mao, M. S. Ramachandra Rao

Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

7 Цитирования (Scopus)
Язык оригиналаАнглийский
Номер статьи174519
Число страниц7
ЖурналPhysical Review B
Том95
Номер выпуска17
DOI
СостояниеОпубликовано - 25 мая 2017

Ключевые слова

    Предметные области ASJC Scopus

    • Condensed Matter Physics

    Предметные области WoS

    • Физика, Конденсированных сред

    Цитировать

    Abdel-Hafiez, M., Kumar, D., Thiyagarajan, R., Zhang, Q., Howie, R. T., Sethupathi, K., ... Rao, M. S. R. (2017). High-pressure behavior of superconducting boron-doped diamond. Physical Review B, 95(17), [174519]. https://doi.org/10.1103/PhysRevB.95.174519
    Abdel-Hafiez, Mahmoud ; Kumar, Dinesh ; Thiyagarajan, R. ; Zhang, Q. ; Howie, R. T. ; Sethupathi, K. ; Volkova, O. ; Vasiliev, A. ; Yang, W. H. ; Mao, H. K. ; Rao, M. S. Ramachandra. / High-pressure behavior of superconducting boron-doped diamond. В: Physical Review B. 2017 ; Том 95, № 17.
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    title = "High-pressure behavior of superconducting boron-doped diamond",
    keywords = "IMPURITY BAND SUPERCONDUCTIVITY, EQUATION-OF-STATE, NANOCRYSTALLINE DIAMOND, CRITICAL-FIELD, RAMAN-SPECTROSCOPY, FILMS, TEMPERATURE, TRANSITION, DEPENDENCE, GRAPHITE",
    author = "Mahmoud Abdel-Hafiez and Dinesh Kumar and R. Thiyagarajan and Q. Zhang and Howie, {R. T.} and K. Sethupathi and O. Volkova and A. Vasiliev and Yang, {W. H.} and Mao, {H. K.} and Rao, {M. S. Ramachandra}",
    year = "2017",
    month = "5",
    day = "25",
    doi = "10.1103/PhysRevB.95.174519",
    language = "English",
    volume = "95",
    journal = "Physical Review B",
    issn = "2469-9950",
    publisher = "American Physical Society",
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    Abdel-Hafiez, M, Kumar, D, Thiyagarajan, R, Zhang, Q, Howie, RT, Sethupathi, K, Volkova, O, Vasiliev, A, Yang, WH, Mao, HK & Rao, MSR 2017, 'High-pressure behavior of superconducting boron-doped diamond' Physical Review B, том. 95, № 17, 174519. https://doi.org/10.1103/PhysRevB.95.174519

    High-pressure behavior of superconducting boron-doped diamond. / Abdel-Hafiez, Mahmoud; Kumar, Dinesh; Thiyagarajan, R.; Zhang, Q.; Howie, R. T.; Sethupathi, K.; Volkova, O.; Vasiliev, A.; Yang, W. H.; Mao, H. K.; Rao, M. S. Ramachandra.

    В: Physical Review B, Том 95, № 17, 174519, 25.05.2017.

    Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

    TY - JOUR

    T1 - High-pressure behavior of superconducting boron-doped diamond

    AU - Abdel-Hafiez, Mahmoud

    AU - Kumar, Dinesh

    AU - Thiyagarajan, R.

    AU - Zhang, Q.

    AU - Howie, R. T.

    AU - Sethupathi, K.

    AU - Volkova, O.

    AU - Vasiliev, A.

    AU - Yang, W. H.

    AU - Mao, H. K.

    AU - Rao, M. S. Ramachandra

    PY - 2017/5/25

    Y1 - 2017/5/25

    KW - IMPURITY BAND SUPERCONDUCTIVITY

    KW - EQUATION-OF-STATE

    KW - NANOCRYSTALLINE DIAMOND

    KW - CRITICAL-FIELD

    KW - RAMAN-SPECTROSCOPY

    KW - FILMS

    KW - TEMPERATURE

    KW - TRANSITION

    KW - DEPENDENCE

    KW - GRAPHITE

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    U2 - 10.1103/PhysRevB.95.174519

    DO - 10.1103/PhysRevB.95.174519

    M3 - Article

    VL - 95

    JO - Physical Review B

    JF - Physical Review B

    SN - 2469-9950

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    M1 - 174519

    ER -

    Abdel-Hafiez M, Kumar D, Thiyagarajan R, Zhang Q, Howie RT, Sethupathi K и соавт. High-pressure behavior of superconducting boron-doped diamond. Physical Review B. 2017 Май 25;95(17). 174519. https://doi.org/10.1103/PhysRevB.95.174519