Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells

T. S. Shamirzaev, J. Rautert, D. R. Yakovlev, M. M. Glazov, M. Bayer

Результат исследований: Вклад в журнал › Статья › Научно-исследовательская › рецензирование

Язык оригиналаАнглийский
Номер статьи155301
Число страниц10
ЖурналPhysical Review B
Том99
Номер выпуска15
DOI
СостояниеОпубликовано - 5 апр 2019

Отпечаток

linear polarization
Excitons
Semiconductor quantum wells
excitons
quantum wells
Polarization
Magnetic fields
magnetic fields
Zeeman effect
Tensors
Monolayers
Photoluminescence
Energy gap
Anisotropy
alignment
tensors
Crystalline materials
photoluminescence
Temperature
anisotropy

Ключевые слова

    Предметные области ASJC Scopus

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Предметные области WoS

    • Материаловедение, Междисциплинарные труды
    • Физика, Прикладная
    • Физика, Конденсированных сред

    Цитировать

    Shamirzaev, T. S. ; Rautert, J. ; Yakovlev, D. R. ; Glazov, M. M. ; Bayer, M. / Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells. В: Physical Review B. 2019 ; Том 99, № 15.
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    author = "Shamirzaev, {T. S.} and J. Rautert and Yakovlev, {D. R.} and Glazov, {M. M.} and M. Bayer",
    year = "2019",
    month = "4",
    day = "5",
    doi = "10.1103/PhysRevB.99.155301",
    language = "English",
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    journal = "Physical Review B",
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    Shamirzaev, TS, Rautert, J, Yakovlev, DR, Glazov, MM & Bayer, M 2019, 'Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells' Physical Review B, том. 99, № 15, 155301. https://doi.org/10.1103/PhysRevB.99.155301

    Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells. / Shamirzaev, T. S.; Rautert, J.; Yakovlev, D. R.; Glazov, M. M.; Bayer, M.

    В: Physical Review B, Том 99, № 15, 155301, 05.04.2019.

    Результат исследований: Вклад в журнал › Статья › Научно-исследовательская › рецензирование

    TY - JOUR

    T1 - Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells

    AU - Shamirzaev, T. S.

    AU - Rautert, J.

    AU - Yakovlev, D. R.

    AU - Glazov, M. M.

    AU - Bayer, M.

    PY - 2019/4/5

    Y1 - 2019/4/5

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    U2 - 10.1103/PhysRevB.99.155301

    DO - 10.1103/PhysRevB.99.155301

    M3 - Article

    VL - 99

    JO - Physical Review B

    JF - Physical Review B

    SN - 2469-9950

    IS - 15

    M1 - 155301

    ER -

    Shamirzaev TS, Rautert J, Yakovlev DR, Glazov MM, Bayer M. Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells. Physical Review B. 2019 Апр. 5;99(15). 155301. https://doi.org/10.1103/PhysRevB.99.155301

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