Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure

Результат исследований: Глава в книге, отчете, сборнике статейМатериалы конференцииНаучно-исследовательскаярецензирование

2 Цитирования (Scopus)
Язык оригиналаАнглийский
Название основной публикацииProceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018
ИздательInstitute of Electrical and Electronics Engineers Inc.
Страницы279-282
Число страниц4
ISBN (электронное издание)9781538649466
DOI
СостояниеОпубликовано - 13 июн 2018
Событие2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018 - Yekaterinburg, Российская Федерация
Продолжительность: 6 мая 20188 мая 2018

Конференция

Конференция2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018
СтранаРоссийская Федерация
ГородYekaterinburg
Период06/05/201808/05/2018

Отпечаток

TiO2
Current voltage characteristics
Oxides
titanium
Titanium
Memristors
Sandwich structures
oxides
sandwich structures
Anodic oxidation
low resistance
high resistance
electric potential
Voltage
Metal foil
Sandwich Structures
foils
tubes
Data storage equipment
Oxidation

Ключевые слова

    Предметные области ASJC Scopus

    • Information Systems
    • Biomedical Engineering
    • Computer Networks and Communications
    • Computer Science Applications
    • Modelling and Simulation
    • Instrumentation
    • Electrical and Electronic Engineering
    • Control and Optimization

    Цитировать

    Dorosheva, I. B., Vokhmintsev, A. S., Kamalov, R. V., Gryaznov, A. O., & Weinstein, I. A. (2018). Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. В Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018 (стр. 279-282). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/USBEREIT.2018.8384604
    Dorosheva, Irina B. ; Vokhmintsev, Alexander S. ; Kamalov, Robert V. ; Gryaznov, Aleksey O. ; Weinstein, Ilya A. / Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. стр. 279-282
    @inproceedings{85751e113bda4b15959eb9441358e54d,
    title = "Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure",
    keywords = "anodic titania, memristor, nanotubular structure, resistive switching, titanium dioxide nanotubes",
    author = "Dorosheva, {Irina B.} and Vokhmintsev, {Alexander S.} and Kamalov, {Robert V.} and Gryaznov, {Aleksey O.} and Weinstein, {Ilya A.}",
    year = "2018",
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    doi = "10.1109/USBEREIT.2018.8384604",
    language = "English",
    pages = "279--282",
    booktitle = "Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
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    }

    Dorosheva, IB, Vokhmintsev, AS, Kamalov, RV, Gryaznov, AO & Weinstein, IA 2018, Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. в Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., стр. 279-282, 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018, Yekaterinburg, Российская Федерация, 06/05/2018. https://doi.org/10.1109/USBEREIT.2018.8384604

    Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. / Dorosheva, Irina B.; Vokhmintsev, Alexander S.; Kamalov, Robert V.; Gryaznov, Aleksey O.; Weinstein, Ilya A.

    Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. стр. 279-282.

    Результат исследований: Глава в книге, отчете, сборнике статейМатериалы конференцииНаучно-исследовательскаярецензирование

    TY - GEN

    T1 - Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure

    AU - Dorosheva, Irina B.

    AU - Vokhmintsev, Alexander S.

    AU - Kamalov, Robert V.

    AU - Gryaznov, Aleksey O.

    AU - Weinstein, Ilya A.

    PY - 2018/6/13

    Y1 - 2018/6/13

    KW - anodic titania

    KW - memristor

    KW - nanotubular structure

    KW - resistive switching

    KW - titanium dioxide nanotubes

    UR - http://www.scopus.com/inward/record.url?scp=85049888588&partnerID=8YFLogxK

    U2 - 10.1109/USBEREIT.2018.8384604

    DO - 10.1109/USBEREIT.2018.8384604

    M3 - Conference contribution

    SP - 279

    EP - 282

    BT - Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018

    PB - Institute of Electrical and Electronics Engineers Inc.

    ER -

    Dorosheva IB, Vokhmintsev AS, Kamalov RV, Gryaznov AO, Weinstein IA. Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure. В Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. Institute of Electrical and Electronics Engineers Inc. 2018. стр. 279-282 https://doi.org/10.1109/USBEREIT.2018.8384604