Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si

A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, S. A. Balagan, K. N. Galkin, N. G. Galkin, T. S. Shamirzaev, A. K. Gutakovskii, M. Iinuma, Y. Terai, S. A. Dotsenko

Результат исследований: Глава в книге, отчете, сборнике статей › Материалы конференции › Научно-исследовательская › рецензирование

Язык оригиналаАнглийский
Название основной публикацииProceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017
ИздательAmerican Institute of Physics Inc.
Том1874
ISBN (электронное издание)9780735415546
DOI
СостояниеОпубликовано - 14 сен 2017
СобытиеInternational Conference on Metamaterials and Nanophotonics, METANANO 2017 - Vladivostok, Российская Федерация
Продолжительность: 18 сен 2017 → 22 сен 2017

Конференция

КонференцияInternational Conference on Metamaterials and Nanophotonics, METANANO 2017
СтранаРоссийская Федерация
ГородVladivostok
Период18/09/2017 → 22/09/2017

Отпечаток

nanocrystals
epitaxy
solid phases
silicon
molecular beam epitaxy
Stark effect
avalanches
light emission
photometers
quantum efficiency
light emitting diodes
adjusting
iron
room temperature
matrices
wavelengths

Предметные области ASJC Scopus

  • Physics and Astronomy(all)

Предметные области WoS

  • Физика, Прикладная

Цитировать

Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Galkin, K. N., Galkin, N. G., ... Dotsenko, S. A. (2017). Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. В Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017 (Том 1874). [030007] American Institute of Physics Inc.. https://doi.org/10.1063/1.4998036
Shevlyagin, A. V. ; Goroshko, D. L. ; Chusovitin, E. A. ; Balagan, S. A. ; Galkin, K. N. ; Galkin, N. G. ; Shamirzaev, T. S. ; Gutakovskii, A. K. ; Iinuma, M. ; Terai, Y. ; Dotsenko, S. A. / Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. Том 1874 American Institute of Physics Inc., 2017.
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title = "Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si",
author = "Shevlyagin, {A. V.} and Goroshko, {D. L.} and Chusovitin, {E. A.} and Balagan, {S. A.} and Galkin, {K. N.} and Galkin, {N. G.} and Shamirzaev, {T. S.} and Gutakovskii, {A. K.} and M. Iinuma and Y. Terai and Dotsenko, {S. A.}",
year = "2017",
month = "9",
day = "14",
doi = "10.1063/1.4998036",
language = "English",
volume = "1874",
booktitle = "Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017",
publisher = "American Institute of Physics Inc.",
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Shevlyagin, AV, Goroshko, DL, Chusovitin, EA, Balagan, SA, Galkin, KN, Galkin, NG, Shamirzaev, TS, Gutakovskii, AK, Iinuma, M, Terai, Y & Dotsenko, SA 2017, Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. в Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. том. 1874, 030007, American Institute of Physics Inc., International Conference on Metamaterials and Nanophotonics, METANANO 2017, Vladivostok, Российская Федерация, 18/09/2017. https://doi.org/10.1063/1.4998036

Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. / Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Balagan, S. A.; Galkin, K. N.; Galkin, N. G.; Shamirzaev, T. S.; Gutakovskii, A. K.; Iinuma, M.; Terai, Y.; Dotsenko, S. A.

Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. Том 1874 American Institute of Physics Inc., 2017. 030007.

Результат исследований: Глава в книге, отчете, сборнике статей › Материалы конференции › Научно-исследовательская › рецензирование

TY - GEN

T1 - Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si

AU - Shevlyagin, A. V.

AU - Goroshko, D. L.

AU - Chusovitin, E. A.

AU - Balagan, S. A.

AU - Galkin, K. N.

AU - Galkin, N. G.

AU - Shamirzaev, T. S.

AU - Gutakovskii, A. K.

AU - Iinuma, M.

AU - Terai, Y.

AU - Dotsenko, S. A.

PY - 2017/9/14

Y1 - 2017/9/14

UR - http://www.scopus.com/inward/record.url?scp=85030632924&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000416955000015

U2 - 10.1063/1.4998036

DO - 10.1063/1.4998036

M3 - Conference contribution

VL - 1874

BT - Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017

PB - American Institute of Physics Inc.

ER -

Shevlyagin AV, Goroshko DL, Chusovitin EA, Balagan SA, Galkin KN, Galkin NG и соавт. Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. В Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. Том 1874. American Institute of Physics Inc. 2017. 030007 https://doi.org/10.1063/1.4998036

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Радиационная физика функциональных материалов

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