The effect of a surface potential on spin-dependent tunnelling in metal-insulator narrow-gap semiconductor structures in a magnetic field

Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

Язык оригиналаАнглийский
Страницы (с-по)867-874
Число страниц8
ЖурналSemiconductor Science and Technology
Том12
Номер выпуска7
DOI
СостояниеОпубликовано - 1 июл 1997

Отпечаток

Surface potential
Metals
insulators
Semiconductor materials
Magnetic fields
magnetic fields
metals
conductivity
Crystal orientation
Band structure
Oxides
energy spectra
oscillations
oxides
causes

Предметные области ASJC Scopus

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Предметные области WoS

  • Технологии, Электротехника и электроника
  • Материаловедение, Междисциплинарные труды
  • Физика, Конденсированных сред

Цитировать

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title = "The effect of a surface potential on spin-dependent tunnelling in metal-insulator narrow-gap semiconductor structures in a magnetic field",
author = "Minkov, {G. M.} and Rut, {O. E.} and Germanenko, {A. V.}",
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}

The effect of a surface potential on spin-dependent tunnelling in metal-insulator narrow-gap semiconductor structures in a magnetic field. / Minkov, G. M.; Rut, O. E.; Germanenko, A. V.

В: Semiconductor Science and Technology, Том 12, № 7, 01.07.1997, стр. 867-874.

Результат исследований: Вклад в журналСтатьяНаучно-исследовательскаярецензирование

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