ИЗЛУЧАТЕЛЬНАЯ АННИГИЛЯЦИЯ P-D-ЭКСИТОНОВ В ТВЕРДЫХ РАСТВОРАХ NI XZN 1-XO

Владимир Николаевич Чурманов, Виктор Иванович Соколов, Владимир Алексеевич Пустоваров, Владимир Юрьевич Иванов, Никита Борисович Груздев, Петр Сергеевич Соколов, Андрей Николаевич Баранов

科研成果: Article

摘要

The temperature dependence of two narrow luminescence lines I 1 and I 2 in solid state solution Ni 0.6Zn 0.4O have been studied. It is shown that intensity of narrow lines decreases with increasing of temperature. The dependence is well described by Mott law in temperature range 10-50 K. We have been observed a broadening of the lines and shift towards low energies with temperature growing. Such behavior is different for I 1 and I 2 so we assume various physical origin of investigated lines. Taking into account the strong decreasing of the lines with temperature growing, similar to donor and acceptor excitons in II-VI compounds doped with 3d elements and shifting of the lines we suppose that I 1 and I 2 lines arise due to p - d exciton annihilation.
投稿的翻译标题p-d exciton annihilation in solid state solutions Ni xZn 1-xO
源语言Russian
页(从-至)222-226
页数5
期刊Известия высших учебных заведений. Физика
57
12-3
Published - 2014

GRNTI

  • 29.00.00 PHYSICS

Level of Research Output

  • VAK List

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