The method of low temperature (< 200 °С) deposition of thin films based on SiCN in a large volume (0.3 m3) chamber, by decomposition of silicon-organic precursor in nitrogen plasma generated in discharge with self-heating hollow cathode and distantly (40 cm) placed anode was investigated. The working pressure was 0.06 Pa, the time of operation - 2 hours. The results of study of the influence of discharge current (10-30 А), of the gas mixture flow (hexamethyldisilazane 3-6 sccm/min and nitrogen 30 sccm/min) and of the arrangement of samples in the chamber on deposition rate (till 5 microns per hour), as well as microhardness (3-9 GPa), the internal tensions (1-2 GPa) and the coating density (1.5-3 g/cm3) were reported. The dimensions of sample`s processing zone ( h 300´ d 120- D 180 mm) within which the heterogeneity of coating thickness on specimens did not exceed 20% were determined. The structure of deposited films was analyzed by means of IR-spectroscopy, and the plasma composition - by optical emission spectroscopy. It was demonstrated that the increase of discharge current leads to growth of the rate of coatings deposition and the degree of decomposition of precursor molecules. The maximum microhardness of coatings (9, up to 18 GPa in some points) was achieved at the samples placed in ≈ 12 cm from the atomizer at discharge current 20 A.
|投稿的翻译标题||Deposition of silicon carbonitride coatings in the plasma of high-current discharge with self-heated hollow cathode|
|期刊||Известия высших учебных заведений. Физика|
|州||Published - 2018|
- 29.00.00 PHYSICS
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