ОСОБЕННОСТИ КРИСТАЛЛОГРАФИЧЕСКОЙ СТРУКТУРЫ БУФЕРНЫХ СЛОЕВ CEO2 НА R-AL2O3 ПОЛУЧЕННЫХ МЕТОДОМ ИМПУЛЬСНОГО ЛАЗЕРНОГО ОСАЖДЕНИЯ

Александр Павлович Носов, С. С. Дубинин, В. И. Осотов

科研成果: Article

摘要

The paper presents the results of structural studies of CeO2 buffer layers grown by pulsed laser deposition on single-crystal substrates of r-Al2O3 ( ) at a substrate temperature of 750C. It was shown experimentally that when the oxygen pressure changes during growth, while maintaining the remaining growth parameters unchanged, it is possible to obtain buffer layers with different crystallographic orientations: at an oxygen pressure of 0.002 mbar, the buffer layers have an orientation of (111), and at an oxygen pressure of 0.2 mbar (002). The results obtained may be of interest for the preparation of epitaxial films and nanoheterostructures with layers of high-temperature superconductors and doped manganites on r-Al2O3 single-crystal substrates with CeO2 buffer layers.
投稿的翻译标题FEATURES OF CRYSTALLOGRAPHIC STRUCTURE OF CeO2 BUFFER LAYERS ON r-Al2O3 OBTAINED BY PULSE LASER DEPOSITION METHOD
源语言Russian
页(从-至)26-29
页数4
期刊Международный научно-исследовательский журнал
12-1 (90)
DOI
Published - 2019

Level of Research Output

  • VAK List

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