Способ калибровки слитка полупроводникового материала: патент на изобретение

科研成果: Patent

摘要

FIELD: electrical engineering. SUBSTANCE: invention relates to the field of electronic products manufacturing, which workpiece is the semiconductor material ingot, which requires calibration, i.e., the cylindrical surface production. In the semiconductor material ingot calibration method, including roughing and finishing, finishing is performed by grinding with diamond wheels with a grain size of 160–250 mcm, and finishing is performed by turning with the cutting depth of 250–350 mcm with the feed of 500–700 mcm/rpm by the diamond blade tool, which main cutting edge has a rounding radius of 0.2–0.5 mcm and is set parallel to the axis. EFFECT: technical result consists in increase in the ingot surface layer quality, reduction in the damaged surface layer after processing, increase in the process productivity, eliminating the long-lasting finishing grinding, replacing the blade processing.
投稿的翻译标题SEMICONDUCTOR MATERIAL INGOT CALIBRATION METHOD
源语言Russian
专利号2682564
IPCH01L 22/12
归档日期09/04/2018
Published - 19 三月 2019

GRNTI

  • 29.03.00

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