摘要

For the first time nanostructured In 2Se 3 thin films were received by a method of a chemical deposition from aqueous solution with using selenocarbamide such as sulfur-supplier. Composition and the superficial structure obtained layers are studied by X-ray photoelectric spectroscopy, scanning electron microscopy, energy dispersive X-ray microanalysis. According to the received data it is established, that a relation of basic elements in layers and the value calculated α-parametre corresponds to indium triselenide. It is shown, that on a surface of films there is a thin oxide layer including organic contaminations. It is established, that layers have the expressed globular structure at synthesize temperature 363 K. The average size of nanocrystallites derivating globules fluctuates to 50 nm. The increasing of synthesis temperature result to decrease of their size.
源语言Russian
页(从-至)509-514
页数6
期刊Фундаментальные проблемы современного материаловедения
11
4
Published - 2014

GRNTI

  • 31.17.00

Level of Research Output

  • VAK List

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